Attribute
Description
Manufacturer Part Number
OPB880T11Z
Description
SENSOR OPT SLOT PHOTOTRANS MODUL
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
1000 ₹ 425.90000 ₹ 4,25,900.00
500 ₹ 427.01000 ₹ 2,13,505.00
250 ₹ 443.91000 ₹ 1,10,977.50
100 ₹ 461.70000 ₹ 46,170.00
1 ₹ 493.73000 ₹ 493.73

Stock:

Distributor: 110


Quantity Unit Price Ext. Price
800 ₹ 431.65000 ₹ 3,45,320.00
600 ₹ 453.90000 ₹ 2,72,340.00
400 ₹ 477.93000 ₹ 1,91,172.00
200 ₹ 502.85000 ₹ 1,00,570.00

Stock:

Distributor: 114


Quantity Unit Price Ext. Price
200 ₹ 524.21000 ₹ 1,04,842.00

Stock:

Distributor: 113


Quantity Unit Price Ext. Price
100 ₹ 624.25000 ₹ 62,425.00

Stock:

Distributor: 118


Quantity Unit Price Ext. Price
5 ₹ 1,495.20000 ₹ 7,476.00
2 ₹ 1,569.96000 ₹ 3,139.92
1 ₹ 1,682.10000 ₹ 1,682.10

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Proximity Detection Range 0.125" (3.18mm)
Detection Technology Type Through-Beam
Output Setup Options Phototransistor
Max Forward DC Current 50 mA
Maximum Collector Amps 30 mA
Max Collector-Emitter Breakdown 30 V
Activation Speed ms -
Ambient Temp Range -40°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Chassis Mount
Component Housing Style Module, Pre-Wired

Description

Has a peak collector current (Ic) of 30 mA. Offers a maximum DC forward current (If) specified at 50 mA. Mounting configuration Chassis Mount for structural stability. Temperature range -40°C ~ 85°C for environmental conditions impacting thermal efficiency. Preferences Phototransistor for establishing system output configurations. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case Module, Pre-Wired that offers mechanical and thermal protection. Product status Active concerning availability and lifecycle. Sensor detection range 0.125" (3.18mm) for sensors or detectors. Method of detection Through-Beam for device operation. Maximum collector-emitter breakdown voltage 30 V.