Attribute
Description
Manufacturer Part Number
OPB820S10
Description
SENSOR OPT SLOT PHOTOTRAN PCB MT
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 113

Quantity Unit Price Ext. Price
40 ₹ 253.65000 ₹ 10,146.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
1000 ₹ 284.67000 ₹ 2,84,670.00
500 ₹ 287.34000 ₹ 1,43,670.00
250 ₹ 299.79000 ₹ 74,947.50
100 ₹ 309.58000 ₹ 30,958.00
1 ₹ 329.15000 ₹ 329.15

Stock:

Distributor: 110


Quantity Unit Price Ext. Price
2000 ₹ 293.70000 ₹ 5,87,400.00
1500 ₹ 309.72000 ₹ 4,64,580.00
1000 ₹ 325.74000 ₹ 3,25,740.00
25 ₹ 343.54000 ₹ 8,588.50

Stock:

Distributor: 115


Quantity Unit Price Ext. Price
2000 ₹ 293.70000 ₹ 5,87,400.00
1500 ₹ 309.72000 ₹ 4,64,580.00
1000 ₹ 325.74000 ₹ 3,25,740.00
25 ₹ 343.54000 ₹ 8,588.50

Stock:

Distributor: 114


Quantity Unit Price Ext. Price
500 ₹ 350.66000 ₹ 1,75,330.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Proximity Detection Range 0.080" (2.03mm)
Detection Technology Type Through-Beam
Output Setup Options Phototransistor
Max Forward DC Current 50 mA
Maximum Collector Amps -
Max Collector-Emitter Breakdown 30 V
Activation Speed ms -
Ambient Temp Range -40°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style PCB Mount

Description

Offers a maximum DC forward current (If) specified at 50 mA. Mounting configuration Through Hole for structural stability. Temperature range -40°C ~ 85°C for environmental conditions impacting thermal efficiency. Preferences Phototransistor for establishing system output configurations. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case PCB Mount that offers mechanical and thermal protection. Product status Active concerning availability and lifecycle. Sensor detection range 0.080" (2.03mm) for sensors or detectors. Method of detection Through-Beam for device operation. Maximum collector-emitter breakdown voltage 30 V.