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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Obsolete | |
| Proximity Detection Range | 0.197" (5mm) | |
| Detection Technology Type | Through-Beam | |
| Output Setup Options | Phototransistor | |
| Max Forward DC Current | 50 mA | |
| Maximum Collector Amps | 20 mA | |
| Max Collector-Emitter Breakdown | 35 V | |
| Activation Speed ms | 3µs, 4µs | |
| Ambient Temp Range | -25°C ~ 85°C | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Snap-In | |
| Component Housing Style | Module, Connector |
Description
Has a peak collector current (Ic) of 20 mA. Offers a maximum DC forward current (If) specified at 50 mA. Mounting configuration Snap-In for structural stability. Temperature range -25°C ~ 85°C for environmental conditions impacting thermal efficiency. Preferences Phototransistor for establishing system output configurations. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case Module, Connector that offers mechanical and thermal protection. Product status Obsolete concerning availability and lifecycle. Time taken to respond 3µs, 4µs for rapid operation or detection. Sensor detection range 0.197" (5mm) for sensors or detectors. Method of detection Through-Beam for device operation. Maximum collector-emitter breakdown voltage 35 V.
