Attribute
Description
Manufacturer Part Number
EAPDSZ4439A4
Description
SENSOR PHOTODIODE 940NM 2SMD GW
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 116

Quantity Unit Price Ext. Price
3000 ₹ 44.45000 ₹ 1,33,350.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
10000 ₹ 45.80000 ₹ 4,58,000.00
5000 ₹ 47.65000 ₹ 2,38,250.00
2000 ₹ 50.60000 ₹ 1,01,200.00
1000 ₹ 53.32000 ₹ 53,320.00
500 ₹ 56.51000 ₹ 28,255.00
100 ₹ 66.30000 ₹ 6,630.00
10 ₹ 88.34000 ₹ 883.40
1 ₹ 124.55000 ₹ 124.55

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Active
Light Wavelength nm 940nm
Vivid Color Option -
Light Spectrum Coverage 730nm ~ 1100nm
Semiconductor Diode Category PIN
Sensitivity at Wavelength -
Activation Speed ms -
Max Reverse DC Voltage 32 V
Typical Dark Current 5nA
Functional Surface Area -
Display View Cone Degrees -
Ambient Temp Range -25°C ~ 85°C
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 2-SMD, Gull Wing

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Shows a typical dark current recorded at 5nA. Shows the type of diode identified as PIN. Mounting configuration Surface Mount for structural stability. Temperature range -25°C ~ 85°C for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 2-SMD, Gull Wing that offers mechanical and thermal protection. Product status Active concerning availability and lifecycle. Wavelength range 730nm ~ 1100nm for illumination or sensor applications. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum reverse DC voltage 32 V for diode applications. Wavelength of light 940nm for RF or optical devices.