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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | Tariff may apply if shipping to the United States | |
| Product Series Line | - | |
| IC Encapsulation Type | Bulk | |
| Availability Status | Active | |
| Proximity Detection Range | - | |
| Detection Technology Type | Reflective | |
| Max Collector-Emitter Breakdown | 35 V | |
| Maximum Collector Amps | 20 mA | |
| Max Forward DC Current | 50 mA | |
| Exit Signal Category | Phototransistor | |
| Activation Speed ms | 80µs, 70µs | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 4-SMD |
Description
Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Has a peak collector current (Ic) of 20 mA. Offers a maximum DC forward current (If) specified at 50 mA. Mounting configuration Surface Mount for structural stability. Type Phototransistor for ensuring compatibility with output systems. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 4-SMD that offers mechanical and thermal protection. Product status Active concerning availability and lifecycle. Time taken to respond 80µs, 70µs for rapid operation or detection. Method of detection Reflective for device operation. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum collector-emitter breakdown voltage 35 V.
