Stock:
Distributor: 122
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 25 | ₹ 22.06000 | ₹ 551.50 |
| 1 | ₹ 22.23000 | ₹ 22.23 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 20 | ₹ 22.06000 | ₹ 441.20 |
Stock:
Distributor: 110
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 8000 | ₹ 24.05000 | ₹ 1,92,400.00 |
| 5000 | ₹ 24.41000 | ₹ 1,22,050.00 |
| 3000 | ₹ 24.78000 | ₹ 74,340.00 |
| 1000 | ₹ 25.16000 | ₹ 25,160.00 |
| 500 | ₹ 25.54000 | ₹ 12,770.00 |
| 50 | ₹ 26.64000 | ₹ 1,332.00 |
Stock:
Distributor: 58
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 750 | ₹ 33.17000 | ₹ 24,877.50 |
| 650 | ₹ 37.41000 | ₹ 24,316.50 |
| 500 | ₹ 41.22000 | ₹ 20,610.00 |
| 50 | ₹ 44.91000 | ₹ 2,245.50 |
| 25 | ₹ 48.67000 | ₹ 1,216.75 |
Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 46.28000 | ₹ 4,628.00 |
| 25 | ₹ 49.84000 | ₹ 1,246.00 |
| 1 | ₹ 60.52000 | ₹ 60.52 |
Stock:
Distributor: 140
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 60.52000 | ₹ 60.52 |
| 25 | ₹ 49.84000 | ₹ 1,246.00 |
| 100 | ₹ 46.28000 | ₹ 4,628.00 |
| 1000 | ₹ 38.27000 | ₹ 38,270.00 |
| 5000 | ₹ 33.82000 | ₹ 1,69,100.00 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 60.52000 | ₹ 60.52 |
| 25 | ₹ 49.84000 | ₹ 1,246.00 |
| 100 | ₹ 46.28000 | ₹ 4,628.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Bag | |
| Availability Status | Active | |
| Field Effect Transistor Type | N-Channel | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Drain-Source Breakdown Volts | 60 V | |
| Continuous Drain Current at 25C | 230mA (Tj) | |
| Gate Drive Voltage Range | 5V, 10V | |
| Max On-State Resistance | 7.5Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Maximum Gate Voltage | ±30V | |
| Max Input Cap at Vds | 50 pF @ 25 V | |
| Transistor Special Function | - | |
| Max Heat Dissipation | 1W (Tc) | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Through Hole | |
| Vendor Package Type | TO-92-3 | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Is capable of sustaining a continuous drain current (Id) of 230mA (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Supports the drive voltage noted at 5V, 10V for RdsOn control. Includes FET category defined as N-Channel. The maximum input capacitance reaches 50 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 50 pF @ 25 V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bag for safeguarding or transporting components. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) that offers mechanical and thermal protection. Type of package TO-92-3 that preserves the integrity of the device. The maximum power dissipation 1W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 7.5Ohm @ 500mA, 10V for MOSFET specifications. Supplier package type TO-92-3 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±30V for MOSFET specifications. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.
