Description

Is capable of sustaining a continuous drain current (Id) of 115mA (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Supports the drive voltage noted at 5V, 10V for RdsOn control. Includes FET category defined as N-Channel. The maximum input capacitance reaches 50 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 50 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Type of package SOT-23 (TO-236AB) that preserves the integrity of the device. The maximum power dissipation 360mW (Ta) for efficient thermal management. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 7.5Ohm @ 500mA, 10V for MOSFET specifications. Supplier package type SOT-23 (TO-236AB) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±30V for MOSFET specifications. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.