Description

Is capable of sustaining a continuous drain current (Id) of 230mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 60 V. Supports the drive voltage noted at 4.5V, 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 1.4 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 1.4 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 41 pF @ 25 V at Vds to protect the device. The input capacitance is specified at 41 pF @ 25 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Type of package PG-SOT23 that preserves the integrity of the device. The maximum power dissipation 360mW (Ta) for efficient thermal management. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 1.4 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.5Ohm @ 230mA, 10V for MOSFET specifications. Classification series for the product or component SIPMOS™. Supplier package type PG-SOT23 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 1.4V @ 26µA for MOSFET threshold specifications.