Attribute
Description
Manufacturer Part Number
BSS138DW-7-F
Manufacturer
Description
MOSFET,
NN CH,
50V,
SOT-363; Transistor Polarity:Dual N Chan...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 2 N-Channel (Dual) | |
| Drain-Source Breakdown Volts | 50V | |
| Continuous Drain Current at 25C | 200mA | |
| Max On-State Resistance | 3.5 Ohm @ 220mA, 10V | |
| Max Threshold Gate Voltage | 1.5V @ 250µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 50pF @ 10V | |
| Maximum Power Handling | 200mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 |
Description
Assesses resistance at forward current 2 N-Channel (Dual) for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 200mA at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Includes FET category defined as 2 N-Channel (Dual). The input capacitance is specified at 50pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 3.5 Ohm @ 220mA, 10V for MOSFET specifications. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.
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