Attribute
Description
Manufacturer Part Number
BSS138DW-7-F
Manufacturer
Description
MOSFET, NN CH, 50V, SOT-363; Transistor Polarity:Dual N Chan...
Manufacturer Lead Time
28 weeks

Our team will assist you shortly.

Product Attributes

Type Description
Category
Field Effect Transistor Type 2 N-Channel (Dual)
Drain-Source Breakdown Volts 50V
Continuous Drain Current at 25C 200mA
Max On-State Resistance 3.5 Ohm @ 220mA, 10V
Max Threshold Gate Voltage 1.5V @ 250µA
Gate Charge at Vgs -
Input Cap at Vds 50pF @ 10V
Maximum Power Handling 200mW
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363

Description

Assesses resistance at forward current 2 N-Channel (Dual) for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 200mA at 25°C. Supports a Vdss drain-to-source voltage rated at 50V. Includes FET category defined as 2 N-Channel (Dual). The input capacitance is specified at 50pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 3.5 Ohm @ 220mA, 10V for MOSFET specifications. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.