Attribute
Description
Manufacturer Part Number
BC817-40-7-F
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
800mA,...
Manufacturer Lead Time
28 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 800mA | |
| Max Collector-Emitter Breakdown | 45V | |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA | |
| Collector Cutoff Max | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V | |
| Maximum Power Handling | 310mW | |
| Transition Freq | 100MHz | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current 100nA for LED or diode testing. Has a peak collector current (Ic) of 800mA. Defines a collector cutoff current indicated at 100nA. Features a DC current gain hFE at Ic assessed at 700mV @ 50mA, 500mA. Provides a 100MHz transition frequency for smooth signal modulation. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 310mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 700mV @ 50mA, 500mA for transistor specifications. Maximum collector-emitter breakdown voltage 45V.
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