Attribute
Description
Manufacturer Part Number
RC28F320C3TA110
Manufacturer
Description
IC FLASH 32MBIT PAR 64EASYBGA
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
25 ₹ 479.92000 ₹ 11,998.00
10 ₹ 511.66000 ₹ 5,116.60
1 ₹ 600.75000 ₹ 600.75

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tray
Availability Status Obsolete
RAM Technology Category Non-Volatile
Storage Media Type FLASH
Core Technology Platform FLASH - Boot Block
Total Memory Bytes 32Mbit
Storage Layout Structure 2M x 16
Data Access Bus Parallel
Timing Pulse Rate -
Memory Write Speed Word/Page 110ns
Data Retrieval Speed 110 ns
Power Supply Voltage 2.7V ~ 3.6V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 64-TBGA
Vendor Package Type 64-EasyBGA (10x13)

Description

Provides data access speeds of 110 ns for effective data retrieval. Media format FLASH for data compatibility. Memory interface Parallel for performance and connectivity. Memory configuration 2M x 16 for efficient data access. Total memory size 32Mbit for device storage capability. Memory type Non-Volatile for efficiency and compatibility. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 85°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Tray for safeguarding or transporting components. Style of the enclosure/case 64-TBGA that offers mechanical and thermal protection. Type of package 64-EasyBGA (10x13) that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Supplier package type 64-EasyBGA (10x13) for component selection. Voltage requirement 2.7V ~ 3.6V for electrical specifications. The primary technology platform FLASH - Boot Block linked to the product category. Voltage supply 2.7V ~ 3.6V for device operation. Duration required to write each word or page 110ns for memory components.