Attribute
Description
Manufacturer Part Number
GB100XCP12-227
Description
IGBTs - Arrays, Modules, 1200V, 100A
Manufacturer Lead Time
10 weeks

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Product Attributes

Type Description
Category
IGBT Class PT
Max Collector-Emitter Breakdown 1200V
Maximum Collector Amps 100A
Maximum Power Handling -
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 100A
Entry Signal Category 8.55nF @ 25V
Attachment Mounting Style Chassis Mount
Component Housing Style SOT-227-4

Description

Has a peak collector current (Ic) of 100A. Features a DC current gain hFE at Ic assessed at 2V @ 15V, 100A. Classified as PT IGBT type for efficient power switching. Configured with 8.55nF @ 25V input type for diverse applications. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case SOT-227-4 that offers mechanical and thermal protection. Maximum Vce(on) at Vge 2V @ 15V, 100A for transistor specifications. Maximum collector-emitter breakdown voltage 1200V.