Attribute
Description
Manufacturer Part Number
SI9910DJ-E3
Manufacturer
Description
IC GATE DRVR HIGH-SIDE 8DIP
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Bulk
Availability Status Obsolete
Load Drive Setup High-Side
Signal Path Design Single
Output Driver Count 1
Logic Gate Category MOSFET (N-Channel)
Power Supply Voltage 10.8V ~ 16.5V
Logic Low/High Voltage -
Peak Source/Sink Output 1A, 1A
Entry Signal Category Non-Inverting
Max Bootstrap High Voltage 500 V
Typical Edge Transition Time 50ns, 35ns
Ambient Temp Range -40°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Through Hole
Component Housing Style 8-DIP (0.300", 7.62mm)
Vendor Package Type 8-PDIP

Description

Organized by channel type referred to as Single. Facilitates peak sourcing and sinking currents of 1A, 1A. Implements the driven arrangement described as High-Side. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 500 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. Mounting configuration Through Hole for structural stability. Total drivers 1 responsible for managing circuits or systems. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Type of package 8-PDIP that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Typical rise and fall duration 50ns, 35ns for signal transitions. Supplier package type 8-PDIP for component selection. Voltage requirement 10.8V ~ 16.5V for electrical specifications. Voltage supply 10.8V ~ 16.5V for device operation.