Description

Organized by channel type referred to as Synchronous. Facilitates a maximum output current level set as 0.8V, 2V. Facilitates peak sourcing and sinking currents of 1A, 2A. Implements the driven arrangement described as Low-Side. Features MOSFET (N-Channel, P-Channel) gate type suitable for efficient transistor control. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2V required to meet digital input/output standards. Mounting configuration Through Hole for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 85°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Type of package 8-PDIP that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 30ns, 25ns for signal transitions. Supplier package type 8-PDIP for component selection. Voltage requirement 7V ~ 20V for electrical specifications. Voltage supply 7V ~ 20V for device operation.