Description

Organized by channel type referred to as Independent. Facilitates peak sourcing and sinking currents of 1.5A, 3A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 200 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. Mounting configuration Surface Mount, Wettable Flank for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 19-WFQFN Exposed Pad that offers mechanical and thermal protection. Type of package 19-WQFN (3x4) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 500ps, 500ps for signal transitions. Supplier package type 19-WQFN (3x4) for component selection. Voltage requirement 4.75V ~ 5.25V, 6V ~ 18V for electrical specifications. Voltage supply 4.75V ~ 5.25V, 6V ~ 18V for device operation.