Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 1.76V, 1.89V. Facilitates peak sourcing and sinking currents of 1.2A, 5A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 107 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 1.76V, 1.89V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 10-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 10-WSON (4x4) that preserves the integrity of the device. Product status Not For New Designs concerning availability and lifecycle. Typical rise and fall duration 7ns, 1.5ns for signal transitions. Supplier package type 10-WSON (4x4) for component selection. Voltage requirement 4.5V ~ 5.5V for electrical specifications. Voltage supply 4.5V ~ 5.5V for device operation.