Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 1.47V, 1.84V. Facilitates peak sourcing and sinking currents of 3A, 4A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 115 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 1.47V, 1.84V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-VDFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-DFN (4x4) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 20ns, 20ns for signal transitions. Supplier package type 8-DFN (4x4) for component selection. Voltage requirement 6V ~ 18V for electrical specifications. Voltage supply 6V ~ 18V for device operation.