Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 0.8V, 2.2V. Facilitates peak sourcing and sinking currents of 2A, 2A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 114 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.2V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) Exposed Pad that offers mechanical and thermal protection. Type of package 8-SOIC-EP that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 10ns, 10ns for signal transitions. Supplier package type 8-SOIC-EP for component selection. Voltage requirement 9V ~ 14V for electrical specifications. Voltage supply 9V ~ 14V for device operation.