Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 4V, 7V. Facilitates peak sourcing and sinking currents of 2A, 2A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 114 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 4V, 7V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 16-VQFN Exposed Pad that offers mechanical and thermal protection. Type of package 16-QFN (5x5) that preserves the integrity of the device. Product status Last Time Buy concerning availability and lifecycle. Typical rise and fall duration 10ns, 10ns for signal transitions. Supplier package type 16-QFN (5x5) for component selection. Voltage requirement 9V ~ 14V for electrical specifications. Voltage supply 9V ~ 14V for device operation.