Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 0.8V, 2.3V. Facilitates peak sourcing and sinking currents of 250mA, 500mA. Implements the driven arrangement described as Half-Bridge. Features IGBT, MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 600 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.3V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 10-VDFN Exposed Pad that offers mechanical and thermal protection. Type of package 10-DFN (4x4) that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Typical rise and fall duration 85ns, 35ns for signal transitions. Supplier package type 10-DFN (4x4) for component selection. Voltage requirement 10V ~ 20V for electrical specifications. Voltage supply 10V ~ 20V for device operation.