Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 1V, 2.4V. Facilitates peak sourcing and sinking currents of 2.5A, 2.5A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 100 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 1V, 2.4V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 8-VDFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-QFN (3x3) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 12ns, 9ns for signal transitions. Supplier package type 8-QFN (3x3) for component selection. Voltage requirement 9V ~ 18V for electrical specifications. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Voltage supply 9V ~ 18V for device operation.