Description

Organized by channel type referred to as Synchronous. Facilitates a maximum output current level set as 1V, 2V. Facilitates peak sourcing and sinking currents of 2A, 2A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 36 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 1V, 2V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -10°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-VQFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-QFN (3x3) that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Typical rise and fall duration 8ns, 8ns for signal transitions. Supplier package type 8-QFN (3x3) for component selection. Voltage requirement 4.5V ~ 5.5V for electrical specifications. Voltage supply 4.5V ~ 5.5V for device operation.