Description

Organized by channel type referred to as Synchronous. Facilitates a maximum output current level set as 0.8V, 2V. Facilitates peak sourcing and sinking currents of 2A, 3A. Implements the driven arrangement described as High-Side and Low-Side. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 12 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range 0°C ~ 85°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 25ns, 15ns for signal transitions. Supplier package type 8-SOIC for component selection. Voltage requirement 10V ~ 13.5V for electrical specifications. Voltage supply 10V ~ 13.5V for device operation.