Description

Organized by channel type referred to as Independent. Facilitates peak sourcing and sinking currents of 3A, 3A. Implements the driven arrangement described as Low-Side. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Configured with Inverting, Non-Inverting input type for diverse applications. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-MLP (3x3) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 12ns, 9ns for signal transitions. Supplier package type 8-MLP (3x3) for component selection. Voltage requirement 4.5V ~ 18V for electrical specifications. Voltage supply 4.5V ~ 18V for device operation.