Description

Organized by channel type referred to as 3-Phase. Facilitates a maximum output current level set as 0.8V, 2.4V. Facilitates peak sourcing and sinking currents of 420mA, 750mA. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Evaluated as Automotive grade for quality control. Supports a maximum high-side voltage of 600 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.4V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 6 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 20-SOIC (0.295", 7.50mm Width) that offers mechanical and thermal protection. Type of package 20-SO Type TH that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Certification AEC-Q100 for compliance with testing or regulatory standards. Typical rise and fall duration 45ns, 25ns for signal transitions. Supplier package type 20-SO Type TH for component selection. Voltage requirement 10V ~ 20V for electrical specifications. Voltage supply 10V ~ 20V for device operation.