Description

Organized by channel type referred to as Independent. Facilitates peak sourcing and sinking currents of 1A, 3A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 50 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-VQFN Exposed Pad that offers mechanical and thermal protection. Type of package V-QFN3030-8 (Type TH) that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Typical rise and fall duration 27ns, 29ns for signal transitions. Supplier package type V-QFN3030-8 (Type TH) for component selection. Voltage requirement 4.5V ~ 5.5V for electrical specifications. Voltage supply 4.5V ~ 5.5V for device operation.