Description

Organized by channel type referred to as Synchronous. Facilitates a maximum output current level set as 0.8V, 2.4V. Facilitates peak sourcing and sinking currents of 1.5A, 2A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 50 V in bootstrap applications. Configured with CMOS/TTL input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.4V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 10-WFDFN Exposed Pad that offers mechanical and thermal protection. Type of package W-DFN3030-10 that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Typical rise and fall duration 17ns, 12ns for signal transitions. Supplier package type W-DFN3030-10 for component selection. Voltage requirement 8V ~ 14V for electrical specifications. Voltage supply 8V ~ 14V for device operation.