Attribute
Description
Manufacturer Part Number
MAX17491GTA+
Description
IC GATE DRVR HALF-BRIDGE 8TQFN
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tube
Load Drive Setup Half-Bridge
Signal Path Design Synchronous
Output Driver Count 2
Logic Gate Category MOSFET (N-Channel)
Power Supply Voltage 4.2V ~ 5.5V
Logic Low/High Voltage -
Peak Source/Sink Output 2A, 2.7A
Entry Signal Category Non-Inverting
Max Bootstrap High Voltage 24 V
Typical Edge Transition Time 10ns, 8ns
Ambient Temp Range -40°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-WQFN Exposed Pad
Vendor Package Type 8-TQFN (3x3)

Description

Organized by channel type referred to as Synchronous. Facilitates peak sourcing and sinking currents of 2A, 2.7A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 24 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-WQFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-TQFN (3x3) that preserves the integrity of the device. Typical rise and fall duration 10ns, 8ns for signal transitions. Supplier package type 8-TQFN (3x3) for component selection. Voltage requirement 4.2V ~ 5.5V for electrical specifications. Voltage supply 4.2V ~ 5.5V for device operation.