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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Signal Booster Category | J-FET | |
| Electrical Circuit Count | 2 | |
| Exit Signal Category | - | |
| Voltage Slew Speed V/us | 13 V/?s | |
| Amplifier Bandwidth Gain | 3MHz | |
| 3dB Bandwidth | - | |
| Bias Input Amperage | 65pA | |
| Input Offset Voltage | 3mV | |
| Power Supply Amperage | 1.4mA | |
| Per-Channel Output Current | - | |
| Single or Dual Supply Option | 7 V ~ 36 V, ?3.5 V ~ 18 V | |
| Ambient Temp Range | -40?C ~ 85?C | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | 8-DIP (0.300", 7.62mm) |
Description
Incorporates a J-FET amplifier configuration for enhanced signal delivery. Assesses resistance at forward current 3MHz for LED or diode testing. Includes the input bias current rated at 65pA. Employs supply current defined as 1.4mA. Adjusted with 3MHz gain bandwidth product for peak performance at elevated frequencies. Mounting configuration Through Hole for structural stability. The total number of circuits stands at 2 for electrical or electronic setups. Temperature range -40?C ~ 85?C for environmental conditions impacting thermal efficiency. Style of the enclosure/case 8-DIP (0.300", 7.62mm) that offers mechanical and thermal protection. Rate of transition 13 V/?s for signal alteration speed. Maximum Vce(on) at Vge 2 for transistor specifications. Input offset voltage 3mV for analog applications. Option to select between single or dual voltage supply ± 7 V ~ 36 V, ?3.5 V ~ 18 V for different devices.
