Description

Is capable of sustaining a continuous drain current (Id) of 360A (Tj) at 25°C. Supports a Vdss drain-to-source voltage rated at 100 V. Supports the drive voltage noted at 6V, 10V for RdsOn control. Includes FET category defined as N-Channel. Ensures maximum 216 nC @ 10 V gate charge at Vgs for improved switching efficiency. Maintains 216 nC @ 10 V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 16011 pF @ 50 V at Vds to protect the device. The input capacitance is specified at 16011 pF @ 50 V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerSFN that offers mechanical and thermal protection. Type of package PG-HSOF-8-1 that preserves the integrity of the device. The maximum power dissipation 375W (Tc) for efficient thermal management. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 216 nC @ 10 V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.4mOhm @ 100A, 10V for MOSFET specifications. Classification series for the product or component OptiMOS™. Supplier package type PG-HSOF-8-1 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs ±20V for MOSFET specifications. Maximum Vgs(th) at Id 3.8V @ 275µA for MOSFET threshold specifications.