Attribute
Description
Manufacturer Part Number
SST5486-E3
Manufacturer
Description
Junction Field Effect Transistors,
25V,
350mW
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 25V | |
| Drain-Source Breakdown Volts | - | |
| Drain Current at Vds | 8mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 2V @ 10nA | |
| Maximum Power Handling | 350mW | |
| Input Cap at Vds | 5pF @ 15V | |
| RDS On Resistance | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current N-Channel for LED or diode testing. Is capable of supporting a drain current Idss at Vds noted at 8mA @ 15V. Includes FET category defined as N-Channel. The input capacitance is specified at 5pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 350mW for safeguarding the device. Maximum Rds(on) at Id 2V @ 10nA for MOSFET performance. The V(BR)GSS breakdown threshold 25V for semiconductor devices. Cutoff voltage VGS off at Id 2V @ 10nA for MOSFET devices.
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