Attribute
Description
Manufacturer Part Number
2SK34260TL
Manufacturer
Description
Junction Field Effect Transistors, 100mW
Manufacturer Lead Time
27 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type N-Channel
Breakdown VBR GSS -
Drain-Source Breakdown Volts 20V
Drain Current at Vds 107µA @ 2V
Drain Current Id 2mA
Cutoff VGS at Id -
Maximum Power Handling 100mW
Input Cap at Vds -
RDS On Resistance -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-723

Description

Assesses resistance at forward current N-Channel for LED or diode testing. Is capable of supporting a drain current Idss at Vds noted at 107µA @ 2V. Rated for a drain current Id of 2mA. Supports a Vdss drain-to-source voltage rated at 20V. Includes FET category defined as N-Channel. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-723 that offers mechanical and thermal protection. Maximum power capability 100mW for safeguarding the device.