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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 30V | |
| Drain-Source Breakdown Volts | 30V | |
| Drain Current at Vds | 25mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 2V @ 10nA | |
| Maximum Power Handling | 225mW | |
| Input Cap at Vds | 14pF @ 15V | |
| RDS On Resistance | 60 Ohm | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current N-Channel for LED or diode testing. Is capable of supporting a drain current Idss at Vds noted at 25mA @ 15V. Supports a Vdss drain-to-source voltage rated at 30V. Includes FET category defined as N-Channel. The input capacitance is specified at 14pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Resistance during the on-state 60 Ohm for effective conduction. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 225mW for safeguarding the device. Maximum Rds(on) at Id 2V @ 10nA for MOSFET performance. The RDS(on) resistance figure 60 Ohm crucial for the functioning of MOSFETs. The V(BR)GSS breakdown threshold 30V for semiconductor devices. Cutoff voltage VGS off at Id 2V @ 10nA for MOSFET devices.
