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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | N-Channel | |
| Breakdown VBR GSS | 25V | |
| Drain-Source Breakdown Volts | 25V | |
| Drain Current at Vds | 2mA @ 15V | |
| Drain Current Id | - | |
| Cutoff VGS at Id | 1V @ 10nA | |
| Maximum Power Handling | 310mW | |
| Input Cap at Vds | 7pF @ 15V | |
| RDS On Resistance | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Assesses resistance at forward current N-Channel for LED or diode testing. Is capable of supporting a drain current Idss at Vds noted at 2mA @ 15V. Supports a Vdss drain-to-source voltage rated at 25V. Includes FET category defined as N-Channel. The input capacitance is specified at 7pF @ 15V at Vds for peak performance. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) that offers mechanical and thermal protection. Maximum power capability 310mW for safeguarding the device. Maximum Rds(on) at Id 1V @ 10nA for MOSFET performance. The V(BR)GSS breakdown threshold 25V for semiconductor devices. Cutoff voltage VGS off at Id 1V @ 10nA for MOSFET devices.
