Attribute
Description
Manufacturer Part Number
GT60N321(Q)
Manufacturer
Description
IGBTs - Single,
1000V,
60A,
170W
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 1000V | |
| Maximum Collector Amps | 60A | |
| Maximum Power Handling | 170W | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-3PL |
Description
Has a peak collector current (Ic) of 60A. Features a DC current gain hFE at Ic assessed at 2.8V @ 15V, 60A. Configured with Standard input type for diverse applications. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-3PL that offers mechanical and thermal protection. Maximum power capability 170W for safeguarding the device. Maximum Vce(on) at Vge 2.8V @ 15V, 60A for transistor specifications. Maximum collector-emitter breakdown voltage 1000V.
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