Attribute
Description
Manufacturer Part Number
XN0NE9200L
Manufacturer
Description
MOSFET P-CH 12V 1.2A MINI-5P
Manufacturer Lead Time
27 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET P-Channel, Metal Oxide
Drain-Source Breakdown Volts 12V
Continuous Drain Current at 25C 1.2A (Ta)
Max On-State Resistance 450 mOhm @ 800mA, 4V
Max Threshold Gate Voltage 1.3V @ 1mA
Gate Charge at Vgs -
Input Cap at Vds -
Maximum Power Handling 600mW
Attachment Mounting Style Surface Mount
Component Housing Style SC-74A, SOT-753

Description

Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 1.2A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 12V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-74A, SOT-753 that offers mechanical and thermal protection. Maximum power capability 600mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 450 mOhm @ 800mA, 4V for MOSFET specifications. Maximum Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold specifications.