Attribute
Description
Manufacturer Part Number
XN0NE9200L
Manufacturer
Description
MOSFET P-CH 12V 1.2A MINI-5P
Manufacturer Lead Time
27 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET P-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 12V | |
| Continuous Drain Current at 25C | 1.2A (Ta) | |
| Max On-State Resistance | 450 mOhm @ 800mA, 4V | |
| Max Threshold Gate Voltage | 1.3V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 600mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-74A, SOT-753 |
Description
Assesses resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 1.2A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 12V. Includes FET category defined as MOSFET P-Channel, Metal Oxide. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-74A, SOT-753 that offers mechanical and thermal protection. Maximum power capability 600mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 450 mOhm @ 800mA, 4V for MOSFET specifications. Maximum Vgs(th) at Id 1.3V @ 1mA for MOSFET threshold specifications.
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