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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 100mA (Ta) | |
| Max On-State Resistance | 3 Ohm @ 10mA, 4V | |
| Max Threshold Gate Voltage | 1.5V @ 1µA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 12pF @ 3V | |
| Maximum Power Handling | 150mW | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-85 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 100mA (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 12pF @ 3V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-85 that offers mechanical and thermal protection. Maximum power capability 150mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 3 Ohm @ 10mA, 4V for MOSFET specifications. Maximum Vgs(th) at Id 1.5V @ 1µA for MOSFET threshold specifications.
