Attribute
Description
Manufacturer Part Number
FK3303010L
Manufacturer
Description
MOSFET, N-CH, 30V, SSSMINI3-F2-B; Transistor Polarity:N Chan...
Manufacturer Lead Time
27 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 100mA
Max On-State Resistance 3 Ohm @ 10mA, 4V
Max Threshold Gate Voltage 1.5V @ 1µA
Gate Charge at Vgs -
Input Cap at Vds 12pF @ 3V
Maximum Power Handling 100mW
Attachment Mounting Style Surface Mount
Component Housing Style SOT-723

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 100mA at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 12pF @ 3V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SOT-723 that offers mechanical and thermal protection. Maximum power capability 100mW for safeguarding the device. Maximum Rds(on) at Id and Vgs 3 Ohm @ 10mA, 4V for MOSFET specifications. Maximum Vgs(th) at Id 1.5V @ 1µA for MOSFET threshold specifications.