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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 2.5A (Tc) | |
| Max On-State Resistance | 1.7 Ohm @ 1.25A, 10V | |
| Max Threshold Gate Voltage | 4V @ 1mA | |
| Gate Charge at Vgs | - | |
| Input Cap at Vds | 170pF @ 20V | |
| Maximum Power Handling | 10W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | U-G1 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 2.5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 170pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case U-G1 that offers mechanical and thermal protection. Maximum power capability 10W for safeguarding the device. Maximum Rds(on) at Id and Vgs 1.7 Ohm @ 1.25A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 1mA for MOSFET threshold specifications.
