Attribute
Description
Manufacturer Part Number
2SK303000L
Manufacturer
Description
MOSFET N-CH 100V 8A UG-1
Manufacturer Lead Time
27 weeks

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 100V
Continuous Drain Current at 25C 8A (Tc)
Max On-State Resistance 230 mOhm @ 4A, 10V
Max Threshold Gate Voltage 2.5V @ 1mA
Gate Charge at Vgs -
Input Cap at Vds 290pF @ 10V
Maximum Power Handling 15W
Attachment Mounting Style Surface Mount
Component Housing Style U-G1

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 8A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 100V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. The input capacitance is specified at 290pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case U-G1 that offers mechanical and thermal protection. Maximum power capability 15W for safeguarding the device. Maximum Rds(on) at Id and Vgs 230 mOhm @ 4A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 2.5V @ 1mA for MOSFET threshold specifications.