Attribute
Description
Manufacturer Part Number
2N6800U
Description
MOSFET N-CH 400V 18LCC
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Field Effect Transistor Type MOSFET N-Channel, Metal Oxide
Drain-Source Breakdown Volts 400V
Continuous Drain Current at 25C 3A (Tc)
Max On-State Resistance 1 Ohm @ 2A, 10V
Max Threshold Gate Voltage 4V @ 250µA
Gate Charge at Vgs 5.75nC @ 10V
Input Cap at Vds -
Maximum Power Handling 800mW
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 3A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 400V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 5.75nC @ 10V gate charge at Vgs for dependable MOSFET operation. Maximum power capability 800mW for safeguarding the device. Maximum Rds(on) at Id 5.75nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1 Ohm @ 2A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.