Attribute
Description
Manufacturer Part Number
2N6784
Manufacturer
Description
MOSFET N-CH 200V TO-205AF
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 200V | |
| Continuous Drain Current at 25C | 2.25A (Tc) | |
| Max On-State Resistance | 1.5 Ohm @ 1.5A, 0V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Gate Charge at Vgs | 8.6nC @ 10V | |
| Input Cap at Vds | - | |
| Maximum Power Handling | 800mW | |
| Attachment Mounting Style | - | |
| Component Housing Style | - |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 2.25A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 200V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 8.6nC @ 10V gate charge at Vgs for dependable MOSFET operation. Maximum power capability 800mW for safeguarding the device. Maximum Rds(on) at Id 8.6nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 1.5 Ohm @ 1.5A, 0V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.
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