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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 600V | |
| Continuous Drain Current at 25C | 7.3A (Tc) | |
| Max On-State Resistance | 600 mOhm @ 2.4A, 10V | |
| Max Threshold Gate Voltage | 3.5V @ 200µA | |
| Gate Charge at Vgs | 20.5nC @ 10V | |
| Input Cap at Vds | 440pF @ 100V | |
| Maximum Power Handling | 63W | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 7.3A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 600V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 20.5nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 440pF @ 100V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-252-3, DPak (2 Leads + Tab), SC-63 that offers mechanical and thermal protection. Maximum power capability 63W for safeguarding the device. Maximum Rds(on) at Id 20.5nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 600 mOhm @ 2.4A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 3.5V @ 200µA for MOSFET threshold specifications.
