200mA (Io), Reverse Leakage Current @ Vr,1.4mA @ 35V, Heat Dissipation Resistance,3°C/W Jc, Junction Temp Range,-55°C ~ 125°C./>
Attribute
Description
Manufacturer Part Number
UPS835L/TR13
Description
Diodes Rectifiers - Single, 35V, 8A
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Semiconductor Diode Category Schottky
Reverse DC Voltage(Vr) 35V
Average DC Output Current 8A
Forward Voltage (Vf) 510mV @ 8A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery -
Reverse Leakage Current @ Vr 1.4mA @ 35V
Capacitance at Voltage and Frequency -
Heat Dissipation Resistance 3°C/W Jc
Junction Temp Range -55°C ~ 125°C
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 510mV @ 8A for LED or diode testing. Provides an average rectified current (Io) recorded at 8A. Shows the type of diode identified as Schottky. Resistance during the on-state 3°C/W Jc for effective conduction. Temperature range -55°C ~ 125°C at the junction to safeguard components. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 3°C/W Jc for managing temperature. Maximum Vce(on) at Vge Schottky for transistor specifications.