Our team will assist you shortly.
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Semiconductor Diode Category | Schottky | |
| Reverse DC Voltage(Vr) | 60V | |
| Average DC Output Current | 3A | |
| Forward Voltage (Vf) | 630mV @ 3.5A | |
| Operational Speed Rating | Fast Recovery =< 500ns, > 200mA (Io) | |
| trr Recovery | - | |
| Reverse Leakage Current @ Vr | 200µA @ 60V | |
| Capacitance at Voltage and Frequency | 130pF @ 4V, 1MHz | |
| Heat Dissipation Resistance | 3.2°C/W Jc | |
| Junction Temp Range | -55°C ~ 125°C | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | Powermite®3 |
Description
Assesses resistance at forward current 630mV @ 3.5A for LED or diode testing. Enables capacitance at voltage Vr and frequency indicated as 130pF @ 4V, 1MHz. Provides an average rectified current (Io) recorded at 3A. Shows the type of diode identified as Schottky. Mounting configuration Surface Mount for structural stability. Resistance during the on-state 3.2°C/W Jc for effective conduction. Temperature range -55°C ~ 125°C at the junction to safeguard components. Style of the enclosure/case Powermite®3 that offers mechanical and thermal protection. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 3.2°C/W Jc for managing temperature. Maximum Vce(on) at Vge Schottky for transistor specifications.
