200mA (Io), trr Recovery,25ns, Reverse Leakage Current @ Vr,2µA @ 50V, Heat Dissipation Resistance,10°C/W Jc, Junction Temp Range,-55°C ~ 150°C./>
Attribute
Description
Manufacturer Part Number
UPR5E3/TR7
Description
UPR5e3 Series 50 V 2.5 A High Efficiency SMT Ultrafast Recti...
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 50V
Average DC Output Current 2.5A
Forward Voltage (Vf) 975mV @ 2A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery 25ns
Reverse Leakage Current @ Vr 2µA @ 50V
Capacitance at Voltage and Frequency -
Heat Dissipation Resistance 10°C/W Jc
Junction Temp Range -55°C ~ 150°C
Attachment Mounting Style -
Component Housing Style -

Description

Assesses resistance at forward current 975mV @ 2A for LED or diode testing. Provides an average rectified current (Io) recorded at 2.5A. Shows the type of diode identified as Standard. Resistance during the on-state 10°C/W Jc for effective conduction. Temperature range -55°C ~ 150°C at the junction to safeguard components. Reverse recovery time 25ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 10°C/W Jc for managing temperature. Maximum Vce(on) at Vge Standard for transistor specifications.