200mA (Io), trr Recovery,35ns, Reverse Leakage Current @ Vr,100µA @ 1200V, Heat Dissipation Resistance,0.5°C/W Cs, Junction Temp Range,-55°C ~ 175°C, Attachment Mounting Style,Through Hole, Component Housing Style,TO-220-2./>
Attribute
Description
Manufacturer Part Number
DSEP12-12B
Manufacturer
Description
DSEP Series 1200 V 15 A 95 W Flange Mount HiPerFRED Epitaxia...
Manufacturer Lead Time
38 weeks

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Product Attributes

Type Description
Category
Semiconductor Diode Category Standard
Reverse DC Voltage(Vr) 1200V (1.2kV)
Average DC Output Current 15A
Forward Voltage (Vf) 3.25V @ 15A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery 35ns
Reverse Leakage Current @ Vr 100µA @ 1200V
Capacitance at Voltage and Frequency -
Heat Dissipation Resistance 0.5°C/W Cs
Junction Temp Range -55°C ~ 175°C
Attachment Mounting Style Through Hole
Component Housing Style TO-220-2

Description

Assesses resistance at forward current 3.25V @ 15A for LED or diode testing. Provides an average rectified current (Io) recorded at 15A. Shows the type of diode identified as Standard. Mounting configuration Through Hole for structural stability. Resistance during the on-state 0.5°C/W Cs for effective conduction. Temperature range -55°C ~ 175°C at the junction to safeguard components. Style of the enclosure/case TO-220-2 that offers mechanical and thermal protection. Reverse recovery time 35ns for switching diodes. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Thermal resistance measurement 0.5°C/W Cs for managing temperature. Maximum Vce(on) at Vge Standard for transistor specifications.