500mA (Io), trr Recovery,0ns, Reverse Leakage Current @ Vr,50µA @ 1200V, Capacitance at Voltage and Frequency,131pF @ 1V, 1MHz, Heat Dissipation Resistance,2.3°C/W Jc, Junction Temp Range,-55°C ~ 175°C./>
Attribute
Description
Manufacturer Part Number
GB02SLT12-214
Description
SIC SCHOTTKY DIODE 1200V 2A
Manufacturer Lead Time
10 weeks

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Product Attributes

Type Description
Category
Semiconductor Diode Category Silicon Carbide Schottky
Reverse DC Voltage(Vr) 1200V (1.2kV)
Average DC Output Current 2A (DC)
Forward Voltage (Vf) 1.8V @ 2A
Operational Speed Rating No Recovery Time > 500mA (Io)
trr Recovery 0ns
Reverse Leakage Current @ Vr 50µA @ 1200V
Capacitance at Voltage and Frequency 131pF @ 1V, 1MHz
Heat Dissipation Resistance 2.3°C/W Jc
Junction Temp Range -55°C ~ 175°C
Attachment Mounting Style -
Component Housing Style -