200mA (Io), Leakage at Vr,3mA @ 20V, Attachment Mounting Style,Chassis Mount, Component Housing Style,Twin Tower./>
Attribute
Description
Manufacturer Part Number
MBR12035CT
Description
Diodes Rectifiers - Arrays and Modules, 35V, 120A (DC)
Manufacturer Lead Time
10 weeks

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Product Attributes

Type Description
Category
Diode Setup -
Semiconductor Diode Category Schottky
Reverse DC Voltage(Vr) (Max) 35V
Average DC Output Current 120A (DC)
Forward Voltage (Vf) 650mV @ 120A
Operational Speed Rating Fast Recovery =< 500ns, > 200mA (Io)
trr Recovery -
Leakage at Vr 3mA @ 20V
Attachment Mounting Style Chassis Mount
Component Housing Style Twin Tower

Description

Assesses resistance at forward current 650mV @ 120A for LED or diode testing. Provides an average rectified current (Io) recorded at 120A (DC). Shows the type of diode identified as Schottky. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case Twin Tower that offers mechanical and thermal protection. Reverse leakage current at Vr 3mA @ 20V for diode specifications. Operational speed Fast Recovery =< 500ns, > 200mA (Io) for mechanical or data tasks. Maximum Vce(on) at Vge Schottky for transistor specifications.