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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | 6 NPN | |
| Max Collector-Emitter Breakdown | 12V | |
| Transition Freq | 10GHz | |
| Noise Figure @ f | 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz | |
| Amplification Factor | 12.4dB ~ 17.5dB | |
| Maximum Power Handling | 250mW | |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 10mA, 3V | |
| Maximum Collector Amps | 30mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 14-SOIC (0.154", 3.90mm Width) |
Description
Assesses resistance at forward current 10GHz for LED or diode testing. Has a peak collector current (Ic) of 30mA. Features a DC current gain hFE at Ic assessed at 40 @ 10mA, 3V. Provides a 10GHz transition frequency for smooth signal modulation. Delivers 12.4dB ~ 17.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case 14-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Maximum power capability 250mW for safeguarding the device. Classification of transistor 6 NPN for circuit design. Maximum Vce(on) at Vge 12.4dB ~ 17.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.
